• Part: IPB80N06S4L-05
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 166.96 KB
Download IPB80N06S4L-05 Datasheet PDF
Infineon
IPB80N06S4L-05
IPB80N06S4L-05 is Power-Transistor manufactured by Infineon.
Features - N-channel - Enhancement mode - AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green Product (Ro HS pliant) - 100% Avalanche tested IPB80N06S4L-05 IPI80N06S4L-05, IPP80N06S4L-05 Product Summary V DS R DS(on),max (SMD version) ID 60 V 4.8 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N06S4L-05 IPI80N06S4L-05 IPP80N06S4L-05 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N06L05 4N06L05 4N06L05 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1) T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=40A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - Value 80 320 152 80 ±16 107 -55 ... +175 55/175/56 Unit A m J A V W °C Rev. 1.0 page 1 2009-03-24 IPB80N06S4L-05 IPI80N06S4L-05, IPP80N06S4L-05 Parameter...