Datasheet Summary
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
BareDie
OptiMOS™3PowerMOSTransistorChip IPC302NE7N3
DataSheet
Rev.2.5 Final
Industrial&Multimarket
OptiMOS™3PowerMOSTransistorChip
1Description
- N-channelenhancementmode
- FordynamiccharacterizationrefertothedatasheetofIPP023NE7N3G
- AQL0.65forvisualinspectionaccordingtofailurecatalogue
- ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C
- Diebond:solderedorglued
- Backsidemetallization:NiVsystem
- Frontsidemetallization:AlCusystem
- Passivation:nitride(onlyonedgestructure)
- Package:sawnonfoil
PowerMOSTransistorChip
Table1KeyPerformance...