• Part: IPC50N04S5-5R8
  • Description: Power-Transistor
  • Manufacturer: Infineon
  • Size: 402.32 KB
Download IPC50N04S5-5R8 Datasheet PDF
IPC50N04S5-5R8 page 2
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Datasheet Summary

OptiMOS™-5 Power-Transistor Features - OptiMOS™ - power MOSFET for automotive applications - N-channel - Enhancement mode - Normal Level - AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green Product (RoHS pliant) - 100% Avalanche tested Product Summary VDS RDS(on),max ID 40 V 5.8 mW 50 A PG-TDSON-8-33 1 1 Type IPC50N04S5-5R8 Package Marking PG-TDSON-8-33 5N045R8 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source...