IPC70N04S5-4R6
IPC70N04S5-4R6 is Power-Transistor manufactured by Infineon.
Features
- Opti MOS™
- power MOSFET for automotive applications
- N-channel
- Enhancement mode
- Normal Level
- AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (Ro HS pliant)
- 100% Avalanche tested
Product Summary VDS RDS(on),max ID
40 V 4.6 m W 70 A PG-TDSON-8-33
1 1
Type IPC70N04S5-4R6
Package
Marking
PG-TDSON-8-33 5N044R6
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100°C, V GS=10V1)
Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse4) Gate source voltage Power dissipation Operating and storage temperature
I D,pulse T C=25°C
E AS I D=35A
I AS
- V GS
- P tot T C=25°C
T j, T stg
- Value
280 32 70 ±20 50 -55 ... +175
Unit A m J A V W °C
Rev. 1.0 page 1
2016-12-09
Parameter...
