• Part: IPC90N04S5-3R6
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 384.60 KB
Download IPC90N04S5-3R6 Datasheet PDF
Infineon
IPC90N04S5-3R6
IPC90N04S5-3R6 is Power-Transistor manufactured by Infineon.
Features - Opti MOS™ - power MOSFET for automotive applications - N-channel - Enhancement mode - Normal Level - AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green Product (Ro HS pliant) - 100% Avalanche tested Product Summary VDS RDS(on),max ID 40 V 3.6 m W 90 A PG-TDSON-8-33 1 1 Type IPC90N04S5-3R6 Package Marking PG-TDSON-8-33 5N043R6 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse4) Gate source voltage Power dissipation Operating and storage temperature I D,pulse T C=25°C E AS I D=45A I AS - V GS - P tot T C=25°C T j, T stg - Value 360 40 90 ±20 63 -55 ... +175 Unit A m J A V W °C Rev. 1.0 page 1 2016-12-06 Parameter...