Datasheet Summary
Public
IPD028N06NF2S Final datasheet
MOSFET
StrongIRFET™2 Power‑Transistor, 60 V
Features
- Optimized for wide range of applications
- N‑channel, normal level
- 100% avalanche tested
- Pb‑free lead plating; RoHS pliant
- Halogen‑free according to IEC61249‑2‑21
Product validation
Qualified according to JEDEC Standard
Table 1 Parameter VDS RDS(on),max ID Qoss QG (0V..10V)
Key Performance Parameters
Value
Unit
2.85 mΩ
68 nC
68 nC
PG‑TO252‑3 tab
2 1
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/Ordering Code IPD028N06NF2S
Package PG‑TO252‑3
Marking 028N06NS
Related Links ‑
Datasheet https://.infineon.
Revision 2.2...