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IPD06P004N - MOSFET

General Description

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Key Features

  • P-Channel.
  • Very low on-resistance RDS(on).
  • 100% avalanche tested.
  • Normal Level.
  • Enhancement mode.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product Validation: Qualified for industrial.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IPD06P004N MOSFET OptiMOSTMPowerTransistor,-60V Features •P-Channel •Verylowon-resistanceRDS(on) •100%avalanchetested •NormalLevel •Enhancementmode •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 ProductValidation: Qualifiedforindustrialapplicationsaccordingtotherelevanttestsof JEDEC47/20/22 Table1KeyPerformanceParameters Parameter Value Unit VDS -60 V RDS(on),max 90 mΩ ID -16.4 A D-PAK tab 1 3 Drain tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPD06P004N Package PG-TO 252-3 Marking 06P004N RelatedLinks - Final Data Sheet 1 Rev.2.0,2018-05-09 OptiMOSTMPowerTransistor,-60V IPD06P004N TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .