IPD90N10S4L-06 - Power-Transistor

Features

N-channel - Enhancement mode.
AEC qualified.
MSL1 up to 260°C peak reflow.
175°C operating temperature.
Green Product (RoHS compliant).
100% Avalanche tested IPD90N10S4L-06 Product Summary V DS R DS(on),max ID 100 V 6.6 mW 90 A PG-TO252-3-313 TAB 1 3 Type IPD90N10S4L-06 Package Marking PG-TO252-3-313 4N10L06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C.

IPD90N10S4L-06 power-transistor by Infineon - Datasheet Preview

Datasheet Details

Part number	IPD90N10S4L-06
Manufacturer	Infineon
File Size	129.65 KB
Description	Power-Transistor
Datasheet	IPD90N10S4L-06 Datasheet

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Full PDF Text Transcription

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OptiMOSTM-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPD90N10S4L-06 Product Summary V DS R DS(on),max ID 100 V 6.

Published: May 29, 2015 |