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IPDD60R105CFD7 Datasheet MOSFET

Manufacturer: Infineon

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Overview

IPDD60R105CFD7 MOSFET 600VCoolMOS™CFD7PowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.ThelatestCoolMOS™CFD7isthe successortotheCoolMOS™CFD2seriesandisanoptimizedplatform tailoredtotargetsoftswitchingapplicationssuchasphase-shiftfull-bridge Pin1 (ZVS)andLLC.Resultingfromreducedgatecharge(Qg),best-in-class 5 reverserecoverycharge(Qrr)andimprovedturnoffbehaviorCoolMOS™ CFD7offershighestefficiencyinresonanttopologies.AspartofInfineon’s fastbodydiodeportfolio,thisnewproductseriesblendsalladvantagesof afastswitchingtechnologytogetherwithsuperiorhardcommutation robustness,withoutsacrificingeasyimplementationinthedesign-in process.

Key Features

  • Ultra-fast body diode.
  • Low gate charge.
  • Best-in-class reverse recovery charge (Qrr).
  • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness.
  • Lowest FOM RDS(on).
  • Qg and RDS(on).
  • Eoss.
  • Best-in-class RDS(on) in SMD and THD packages Benefits.
  • Excellent hard commutation ruggedness.
  • Highest reliability for resonant topologies.
  • Highest efficiency with outstanding ease-of-use / performance tradeoff.
  • Enabl.

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