IPDD60R150G7
IPDD60R150G7 is MOSFET manufactured by Infineon.
Features
- C7Goldgivesbestinclass FOMRDS(on)- Eossand RDS(on)- Qg.
- Suitableforhardandsoftswitching(PFCandhighperformance LLC)
- C7Goldtechnologyenablesbestinclass RDS(on)insmallestfootprint.
- DDPAKpackagehasinbuilt4thpin Kelvin Sourceconfigurationandlow parasiticsourceinductance(~3n H).
- DDPAKpackageis MSL1pliant,total Pb-freeandhaseasyvisual inspectionleads.
- DDPAKSMDpackagebinedwithleadfreedieattachprocess enablesimprovedthermalperformance(Rth).
Benefits
- C7Gold FOMRDS(on)- Qgis15%betterthanprevious C7600Venabling fasterswitchingleadingtohigherefficiency.
- Possibilitytoincreasseeconomiesofscalesbyusagein PFCand PWM topologiesintheapplication.
- C7Goldcanreach50mΩin DDPAK115mm2footprint,whereasprevious BICC7600Vwas40mΩin150mm2D2PAKfootprint.
- Reducingparasiticsourceinductanceby Kelvin Sourceimproves efficiencybyfasterswitchingandeaseofuseduetolessringing.
- DDPAKpackageiseasytouseandhasthehighestqualitystandards.
- Improvedthermalsenable SMDDDPAKpackagetobeusedinhigher currentdesignsthanhasbeenpreviouslypossible.
Potentialapplications
PFCstagesand PWMstages(TTF,LLC)forhighpower/performance SMPSe.g.puting,Server,Tele,UPSand Solar.
Productvalidation
Fullyqualifiedaccordingto JEDECfor Industrial Applications
Pleasenote:For MOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyremended.
PG-HDSOP-10-1
10 6 tab
Drain Pin 6-10, Tab
Gate Pin 1
Driver Source Pin 2
- 1: Internal body diode
- 1
Power Source Pin 3,4,5
Table1Key Performance Parameters
Parameter
Value
Unit
VDS@Tj,max
RDS(on),max
150 mΩ
Qg,typ
23 n C
ID,pulse
ID,continuous @ Tj<150°C...
