IPDD60R145CFD7 Datasheet | Infineon

Features - Ultra-fastbodydiode - Lowgatecharge - Best-in-classreverserecoverycharge(Qrr) - Improved MOSFETreversediodedv/dtanddi F/dtruggedness - Lowest FOMRDS(on)- Qgand RDS(on)- Eoss - Best-in-class RDS(on)in SMDand THDpackages Benefits - Excellenthardmutationruggedness - Highestreliabilityforresonanttopologies - Highestefficiencywithoutstandingease-of-use/performancetradeoff - Enablingincreasedpowerdensitysolutions Potentialapplications Suitablefor Soft Switchingtopologies Optimizedforphase-shiftfull-bridge(ZVS),LLCApplications- Server, Tele,EVCharging Productvalidation Fullyqualifiedaccordingto JEDECfor Industrial Applications Pleasenote:Thesourceandsensesourcepinsarenotexchangeable. Theirexchangemightleadtomalfunction.Forparalleling4pin MOSFET devicestheplacementofthegateresistorisgenerallyremendedtobe onthe Driver Sourceinsteadofthe Gate. PG-HDSOP-10-1 10 6 tab Drain Pin 6-10, tab Gate Pin 1 Driver Source Pin 2 Power Source Pin 3,4,5 Table1Key Performance Parameters Parameter Value Unit VDS @ Tj,max RDS(on),max 145 mΩ Qg,typ 28 n C ID,pulse Eoss @ 400V µJ Body diode di...