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IPF013N04NF2S - 40V MOSFET

General Description

1 Maximum ratings 3 T

Key Features

  • Optimized for wide range of.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Public IPF013N04NF2S Final datasheet MOSFET StrongIRFET™2 Power‑Transistor, 40 V Features • Optimized for wide range of applications • N‑channel, normal level • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 Product validation Qualified according to JEDEC Standard Table 1 Parameter VDS RDS(on),max ID Qoss QG(0V..10V) Key Performance Parameters Value Unit 40 V 1.35 mΩ 239 A 117 nC 106 nC PG‑TO263‑7 tab 123456 7 76 543 21 Drain Pin 4, tab Gate Pin 1 Source Pin 2,3,5,6,7 Type/Ordering Code IPF013N04NF2S Package PG‑TO263‑7 Marking 013N04NS Related Links ‑ Datasheet https://www.infineon.com 1 Revision 2.1 2024‑10‑14 Public StrongIRFET™2 Power‑Transistor, 40 V IPF013N04NF2S Table of Contents Description . . .