IPF019N12NM6
IPF019N12NM6 is MOSFET manufactured by Infineon.
Features
- N-channel,normallevel
- Verylowon-resistance RDS(on)
- Excellentgatechargex RDS(on)product(FOM)
- Verylowreverserecoverycharge(Qrr)
- Highavalancheenergyrating
- 175°Coperatingtemperature
- Optimizedforhighfrequencyswitching
- Pb-freeleadplating;Ro HSpliant
- Halogen-freeaccordingto IEC61249-2-21
- MSL1classifiedaccordingto J-STD-020
Productvalidation
Fullyqualifiedaccordingto JEDECfor Industrial Applications
Table1Key Performance Parameters
Parameter
Value
Unit
RDS(on),max
1.9 mΩ
Qoss
267 n C
113 n C
Qrr(1000A/µs)
336 n C
Type/Ordering Code IPF019N12NM6
Package PG-TO263-7
D²-PAK7pin tab 1
Drain Pin 4, tab
Gate Pin 1
Source Pin 2,3,5,6,7
Marking 019N12N6
Related Links
- Final Data Sheet
Rev.2.0,2023-02-03
Opti MOSTM6Power-Transistor,120V...
