The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Public
IPF018N10NM5LF2 Final datasheet
MOSFET
OptiMOS™ 5 Linear FET 2, 100 V
Features
• Ideal for hot‑swap and e‑fuse applications • Very low on‑resistance RDS(on) • Wide safe operating area SOA • N‑channel, normal level • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21
Product validation
Fully qualified according to JEDEC for Industrial Applications
Table 1 Key performance parameters
Parameter
Value
Unit
VDS
100
V
RDS(on),max
1.8
mΩ
ID
259
A
Ipulse (VDS=56 V, tp=10 ms) 10.7
A
D²‑PAK 7pin
12 3
4 567
Drain Pin 4, tab
Gate Pin 1
Source Pin 2,3,5,6,7
Part number IPF018N10NM5LF2
Package PG‑TO263‑7
Marking 18N10LF2
Related links ‑
Datasheet
https://www.infineon.com
1
Revision 1.