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IPG20N10S4-36A
OptiMOS™-T2 Power-Transistor
Features • Dual N-channel Normal Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI)
Product Summary VDS RDS(on),max4) ID
100 V 36 mW 20 A
PG-TDSON-8-10
Type IPG20N10S4-36A
Package PG-TDSON-8-10
Marking 4N1036
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current one channel active
I D T C=25 °C, V GS=10 V1)
Pulsed drain current2) one channel active
Avalanche energy, single pulse2, 4) Avalanche current, single pulse4)
Gate source voltage
Power dissipation one channel active
T C=100 °C, V GS=10 V2)
I D,pulse -
E AS
IPG20N10S4-36A Datasheet
