IPN70R360P7S - MOSFET

Description

Features

Extremely low losses due to very low FOM RDS(on).
Qg and RDS(on).
Eoss.
Excellent thermal behavior.
Integrated ESD protection diode.
Low switching losses (Eoss).
Product validation acc. JEDEC Standard Benefits.
Cost competitive technology.
Lower temperature.
High ESD ruggedness.
Enables efficiency gains at higher switching frequencies.
Enables high power density designs and small form factors Potenti.

Infineon

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Datasheet Details

Part number	IPN70R360P7S
Manufacturer	Infineon
File Size	0.99 MB
Description	MOSFET
Datasheet	IPN70R360P7S Datasheet
Additional preview pages of the IPN70R360P7S datasheet.

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Full PDF Text Transcription

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IPN70R360P7S MOSFET 700VCoolMOSªP7PowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. ThelatestCoolMOS™P7isanoptimizedplatformtailoredtotargetcost sensitiveapplicationsinconsumermarketssuchascharger,adapter, lighting,TV,etc. ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction MOSFET,combinedwithanexcellentprice/performanceratioandstateof theartease-of-uselevel.Thetechnologymeetshighestefficiency standardsandsupportshighpowerdensity,enablingcustomersgoing towardsveryslimdesigns.

Published: Apr 11, 2020 |