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IPN70R600P7S - Power-Transistor

Features

  • Extremely low losses due to very low FOM RDS(on).
  • Qg and RDS(on).
  • Eoss.
  • Excellent thermal behavior.
  • Integrated ESD protection diode.
  • Low switching losses (Eoss).
  • Product validation acc. JEDEC Standard Benefits.
  • Cost competitive technology.
  • Lower temperature.
  • High ESD rugge.

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Datasheet preview – IPN70R600P7S

Datasheet Details

Part number IPN70R600P7S
Manufacturer Infineon
File Size 1.14 MB
Description Power-Transistor
Datasheet download datasheet IPN70R600P7S Datasheet
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Full PDF Text Transcription

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IPN70R600P7S MOSFET 700VCoolMOSªP7PowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. ThelatestCoolMOS™P7isanoptimizedplatformtailoredtotargetcost sensitiveapplicationsinconsumermarketssuchascharger,adapter, lighting,TV,etc. ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction MOSFET,combinedwithanexcellentprice/performanceratioandstateof theartease-of-uselevel.Thetechnologymeetshighestefficiency standardsandsupportshighpowerdensity,enablingcustomersgoing towardsveryslimdesigns.
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