The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Public
IPP011N03LF2S Final datasheet
MOSFET
StrongIRFET™2 Power‑Transistor, 30 V
Features
• Optimized for a wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21
Product validation
Qualified according to JEDEC Standard
Table 1 Parameter VDS RDS(on),max ID Qoss Qg(0V..4.5V)
Key Performance Parameters
Value
Unit
30
V
1.05
mΩ
210
A
176
nC
108
nC
Type/Ordering Code IPP011N03LF2S
Package PG‑TO220‑3
PG‑TO220‑t3ab
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Marking 011N03F2
Related Links ‑
Datasheet
https://www.infineon.com
1
Revision 2.0 2024‑05‑22
Public
StrongIRFET™2 Power‑Transistor, 30 V
IPP011N03LF2S
Table of Contents
Description . . . . . . . . . .