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IPP011N03LF2S - MOSFET

General Description

1 Maximum ratings 3 T

Key Features

  • Optimized for a wide range of.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Public IPP011N03LF2S Final datasheet MOSFET StrongIRFET™2 Power‑Transistor, 30 V Features • Optimized for a wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 Product validation Qualified according to JEDEC Standard Table 1 Parameter VDS RDS(on),max ID Qoss Qg(0V..4.5V) Key Performance Parameters Value Unit 30 V 1.05 mΩ 210 A 176 nC 108 nC Type/Ordering Code IPP011N03LF2S Package PG‑TO220‑3 PG‑TO220‑t3ab Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Marking 011N03F2 Related Links ‑ Datasheet https://www.infineon.com 1 Revision 2.0 2024‑05‑22 Public StrongIRFET™2 Power‑Transistor, 30 V IPP011N03LF2S Table of Contents Description . . . . . . . . . .