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IPP013N04NF2S - 40V MOSFET

General Description

1 Maximum ratings 3 T

Key Features

  • Optimized for wide range of.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Public IPP013N04NF2S Final datasheet MOSFET StrongIRFET™2 Power‑Transistor, 40 V Features • Optimized for wide range of applications • N‑channel, normal level • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 Product validation Qualified according to JEDEC Standard Table 1 Parameter VDS RDS(on),max ID Qoss QG(0V..10V) Key Performance Parameters Value Unit 40 V 1.3 mΩ 198 A 176 nC 159 nC PG‑TO220‑3 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/Ordering Code IPP013N04NF2S Package PG‑TO220‑3 Marking 013N04NS Related Links ‑ Datasheet https://www.infineon.com 1 Revision 2.1 2024‑10‑07 Public StrongIRFET™2 Power‑Transistor, 40 V IPP013N04NF2S Table of Contents Description . . . . . . . . . . . . . . . . . . . .