IPP114N03LG
IPP114N03LG is Power-Transistor manufactured by Infineon.
Features
- Fast switching MOSFET for SMPS
- Optimized technology for DC/DC converters
- Qualified according to JEDEC1) for target applications
- N-channel, logic level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- Avalanche rated
- Pb-free plating; Ro HS pliant
- Halogen-free according to IEC61249-2-21
Type
IPP114N03L G
IPB114N03L G
Product Summary V DS R DS(on),max ID
IPP114N03L G IPB114N03L G
30 V 11.4 mΩ 30 A
Package Marking
PG-TO220-3-1 114N03L
PG-TO263-3 114N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C
Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage 1) J-STD20 and JESD22 Rev. 2.0
I D,pulse I AS E AS dv /dt
V GS
V GS=4.5 V, T C=25 °C
V GS=4.5 V, T C=100 °C
T C=25...