IPT111N20NFD
IPT111N20NFD is MOSFET manufactured by Infineon.
Features
- N-channel,normallevel
- Fast Diode(FD)withreduced Qrr
- Optimizedforhardmutationruggedness
- Verylowon-resistance RDS(on)
- 175°Coperatingtemperature
- Pb-freeleadplating;Ro HSpliant
- Qualifiedaccordingto JEDEC1)fortargetapplication
- Halogen-freeaccordingto IEC61249-2-21
Table1Key Performance Parameters
Parameter
Value
Unit
VDS 200 V
RDS(on),max
11.1 mΩ
ID 96 A
HSOF
12345 678
Tab
Drain Tab
Gate Pin 1
Source Pin 2-8
Type/Ordering Code IPT111N20NFD
Package PG-HSOF-8
Marking 111N20NF
Related Links
- 1) J-STD20 and JESD22 Final Data Sheet
Rev.2.1,2016-02-23
Opti MOSª3Power-Transistor,200V
Tableof Contents
Description
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