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IQD005N04NM6 - MOSFET

General Description

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Key Features

  • N-channel, normal level.
  • Very low on-resistance RDS(on).
  • Superior thermal resistance.
  • 100% avalanche tested.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

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Full PDF Text Transcription for IQD005N04NM6 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IQD005N04NM6. For precise diagrams, and layout, please refer to the original PDF.

IQD005N04NM6 MOSFET OptiMOSTM6Power-Transistor,40V Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanche...

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on-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),max 0.47 mΩ ID 610 A Qoss 142 nC QG 130 nC PG-TSON-8 5 6 7 8 4 3 2 1 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Type/OrderingCode IQD005N04NM6 Package PG-TSON-8 Marking 00504N6 RelatedLinks - Final Data Sheet 1 Rev.2.0,2023-08-08 OptiMOSTM6Power-Transistor,40V IQD005N04NM6 Tabl

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