IR11688S Overview
Each channel can drive one or multiple parallel MOSFETs to emulate the behavior of Schottky diode rectifiers, bypassing the body diodes for the majority of each conduction period to minimize power dissipation and remaining off during the blocking period. The drain to source voltage of each rectifier MOSFET is sensed to determine the source to drain current and turn each gate on rapidly at the start of each...
IR11688S Key Features
- Secondary-side high speed synchronous rectification controller for resonant half bridge
- Direct sensing of MOSFET drain voltage up to 200V
- Operates up to 400kHz switching frequency
- Programmable Minimum On Time
- Anti-bounce logic and UVLO protection
- Linear turn-off phase to pensate for premature switch off due to parasitic inductance
- 4A peak turn off drive current
- Micropower start-up & ultra-low quiescent current
- 50ns turn-off propagation delay
- Wide Vcc operating range 4.75V to 18V