Infineon Technologies ISC320N12LM6
MOSFET
| Part No. | ISC320N12LM6 |
|---|---|
| Datasheet | ISC320N12LM6 Download |
| Manufacturer |  Infineon Technologies |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES
● N-channel, logic level● Very low on-resistance RDS(on)
● Excellent gate charge x RDS(on) product (FOM)
● Very low reverse recovery charge (Qrr)
● High avalanche energy rating
● 175°C operating temperature
● Optimized for high frequency switching and synchronous rectification
● Pb-free lead plating; RoHS compliant
● Halogen-free according to IEC61249-2-21
● MSL 1 classified according to J-STD-020 Product validation Fully qualified according to JEDEC for Industrial
APPLICATIONS
Table 1 Key Performance Parameters Parameter Value Unit VDS 120 V RDS(on),max 32 mΩ ID 24 A Qoss 13 nC QG (0V...4.5V) 4.1 nC Qrr (1000A/µs) 20.3 nC SuperSO8 8 7 65 56 78 1 23 4 4321 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Type / Ordering Code ISC320N12LM6 Package PG-TDSON-8 Marking 320N12L6 Related Links - Final Data Sheet 1 Rev. 2.0, 2023-10-11 OptiMOSTM 6 Power-Transistor, 120 V ISC320N12LM6 Table of ContentsDESCRIPTION
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