PTFA070601E Datasheet Thermally-enhanced High Power Rf Ldmos Fets

Manufacturer: Infineon

Overview: PTFA070601E PTFA070601F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 60 W, 725 – 770.

Datasheet Details

Part number	PTFA070601E
Manufacturer	Infineon
File Size	276.62 KB
Description	Thermally-Enhanced High Power RF LDMOS FETs
Datasheet	PTFA070601E_Infineon.pdf

The PTFA070601E and PTFA070601F are 60-watt LDMOS FETs designed for cellular power amplifier applications in the 725 to 770 MHz band.

include input matching and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA070601E Package H-36265-2 PTFA070601F Package H-37265-2 2-Carrier WCDMA Performance VDD = 28 V, IDQ = 600 m A, ƒ = 760 MHz, 3GPP WCDMA s ignal, P/A R = 8 dB, 10 MHz carrier spacing -25 -30 55 50 Features.
Broadband internal matching Typical WCDMA performa.

Part Number	Description
PTFA070601F	Thermally-Enhanced High Power RF LDMOS FETs
PTFA071701E	Thermally-Enhanced High Power RF LDMOS FETs
PTFA071701F	Thermally-Enhanced High Power RF LDMOS FETs
PTFA072401EL	Thermally-Enhanced High Power RF LDMOS FETs
PTFA072401FL	Thermally-Enhanced High Power RF LDMOS FETs
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PTFA041501F	Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501GL	Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501HL	Thermally-Enhanced High Power RF LDMOS FETs
PTFA043002E	Thermally-Enhanced High Power RF LDMOS FETs