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PTFA070601F

Manufacturer: Infineon

PTFA070601F datasheet by Infineon.

This datasheet includes multiple variants, all published together in a single manufacturer document.

PTFA070601F datasheet preview

PTFA070601F Datasheet Details

Part number PTFA070601F
Datasheet PTFA070601F PTFA070601E Datasheet (PDF)
File Size 276.62 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FETs
PTFA070601F page 2 PTFA070601F page 3

PTFA070601F Overview

The PTFA070601E and PTFA070601F are 60-watt LDMOS FETs designed for cellular power amplifier applications in the 725 to 770 MHz band.

PTFA070601F Key Features

  • 25 -30 55 50
  • Broadband internal matching Typical WCDMA performance, 760 MHz, 28 V
  • Average output power = 12 W
  • Gain = 19 dB
  • Efficiency = 29% Typical CW performance, 760 MHz, 28 V
  • Output power at P-1dB = 60 W
  • Gain = 19 dB
  • Efficiency = 72% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI dri
  • 35 -40 -45 -50 -55 29 31 33
  • 37 19 29
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More Datasheets from Infineon

View all Infineon datasheets

Part Number Description
PTFA070601E Thermally-Enhanced High Power RF LDMOS FETs
PTFA071701E Thermally-Enhanced High Power RF LDMOS FETs
PTFA071701F Thermally-Enhanced High Power RF LDMOS FETs
PTFA072401EL Thermally-Enhanced High Power RF LDMOS FETs
PTFA072401FL Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501E Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501F Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501GL Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501HL Thermally-Enhanced High Power RF LDMOS FETs
PTFA043002E Thermally-Enhanced High Power RF LDMOS FETs

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