PTFA071701E - Thermally-Enhanced High Power RF LDMOS FETs

Product Overview

Infineon

Part number	PTFA071701E
Manufacturer	Infineon
File Size	278.36 KB
Description	Thermally-Enhanced High Power RF LDMOS FETs
Datasheet	PTFA071701E Datasheet
Additional preview pages of the PTFA071701E datasheet.

The PTFA071701E and PTFA071701F are 170-watt, LDMOS FETs designed for use in cellular power amplifiers in the 725 to 770 MHz frequency band.

include internal I/O matching, and thermally-enhanced, ceramic open-cavity packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA071701E.
Package H-36248-2 PTFA071701F.
Package H-37248-2 Two-tone Drive-up VDD = 30 V, IDQ = 900 mA, ƒ = 765 MHz, tone spacing = 1 MHz -20 60 55 Features.
Drain Efficiency (%) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadb.

📁 Similar Datasheet

PTFA080551E - Thermally-Enhanced High Power RF LDMOS FETs (Wolfspeed)
PTFA080551F - Thermally-Enhanced High Power RF LDMOS FETs (Wolfspeed)
PTFA - Plug Type Fixed Attenuator (OPLINK)
PTFA142401EL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA142401FL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA180701E - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA180701F - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA181001E - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)

Other Datasheets by Infineon

Published: Aug 6, 2013 |