PTFA071701F Datasheet Thermally-enhanced High Power Rf Ldmos Fets

Manufacturer: Infineon

Overview: PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 – 770.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	PTFA071701F
Manufacturer	Infineon
File Size	278.36 KB
Description	Thermally-Enhanced High Power RF LDMOS FETs
Datasheet	PTFA071701F PTFA071701E Datasheet (PDF)

The PTFA071701E and PTFA071701F are 170-watt, LDMOS FETs designed for use in cellular power amplifiers in the 725 to 770 MHz frequency band.

include internal I/O matching, and thermally-enhanced, ceramic open-cavity packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA071701E.
Package H-36248-2 PTFA071701F.
Package H-37248-2 Two-tone Drive-up VDD = 30 V, IDQ = 900 mA, ƒ = 765 MHz, tone spacing = 1 MHz -20 60 55 Features.
Drain Efficiency (%) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadb.

Part Number	Description
PTFA071701E	Thermally-Enhanced High Power RF LDMOS FETs
PTFA070601E	Thermally-Enhanced High Power RF LDMOS FETs
PTFA070601F	Thermally-Enhanced High Power RF LDMOS FETs
PTFA072401EL	Thermally-Enhanced High Power RF LDMOS FETs
PTFA072401FL	Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501E	Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501F	Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501GL	Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501HL	Thermally-Enhanced High Power RF LDMOS FETs
PTFA043002E	Thermally-Enhanced High Power RF LDMOS FETs