PTFA081501E - Thermally-Enhanced High Power RF LDMOS FETs

Product Overview

Infineon

Part number	PTFA081501E
Manufacturer	Infineon
File Size	278.83 KB
Description	Thermally-Enhanced High Power RF LDMOS FETs
Datasheet	PTFA081501E Datasheet
Additional preview pages of the PTFA081501E datasheet.

The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS® FETs intended for ultralinear applications.

Adjacent Channel Power Ratio (dBc) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical CDMA2000 performance at 900 MHz, 28 V - Average output power = 35 W - Linear Gain = 18 dB - Efficiency = 34% - Adjacent channel power =.
50 dBc Typical CW performance, 900 MHz, 28 V - Output power at P.
1dB = 165 W - Efficiency = 62% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, l.

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Published: Aug 6, 2013 |