PTFA081501E Datasheet Thermally-enhanced High Power Rf Ldmos Fets

Manufacturer: Infineon

Overview: PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900.

Datasheet Details

Part number	PTFA081501E
Manufacturer	Infineon
File Size	278.83 KB
Description	Thermally-Enhanced High Power RF LDMOS FETs
Datasheet	PTFA081501E_Infineon.pdf

The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS® FETs intended for ultralinear applications.

They are characaterized for CDMA and CDMA2000 operation from 864 to 900 MHz.

Thermally-enhanced packages provide the coolest operation available.

Adjacent Channel Power Ratio (dBc) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical CDMA2000 performance at 900 MHz, 28 V - Average output power = 35 W - Linear Gain = 18 dB - Efficiency = 34% - Adjacent channel power =.
50 dBc Typical CW performance, 900 MHz, 28 V - Output power at P.
1dB = 165 W - Efficiency = 62% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, l.

Part Number	Description
PTFA081501F	Thermally-Enhanced High Power RF LDMOS FETs
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PTFA080551F	Thermally-Enhanced High Power RF LDMOS FETs
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PTFA041501F	Thermally-Enhanced High Power RF LDMOS FETs
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PTFA041501HL	Thermally-Enhanced High Power RF LDMOS FETs
PTFA043002E	Thermally-Enhanced High Power RF LDMOS FETs