Datasheet Details
| Part number | PTFA081501E |
|---|---|
| Manufacturer | Infineon |
| File Size | 278.83 KB |
| Description | Thermally-Enhanced High Power RF LDMOS FETs |
| Datasheet |
 PTFA081501E Datasheet
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General Description
The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS® FETs intended for ultralinear applications.
They are characaterized for CDMA and CDMA2000 operation from 864 to 900 MHz.
Thermally-enhanced packages provide the coolest operation available.
Key Features
- Adjacent Channel Power Ratio (dBc) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical CDMA2000 performance at 900 MHz, 28 V - Average output power = 35 W - Linear Gain = 18 dB - Efficiency = 34% - Adjacent channel power =.
- 50 dBc Typical CW performance, 900 MHz, 28 V - Output power at P.
- 1dB = 165 W - Efficiency = 62% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, l.