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PTFA081501F

Manufacturer: Infineon

PTFA081501F datasheet by Infineon.

This datasheet includes multiple variants, all published together in a single manufacturer document.

PTFA081501F datasheet preview

PTFA081501F Datasheet Details

Part number PTFA081501F
Datasheet PTFA081501F PTFA081501E Datasheet (PDF)
File Size 278.83 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FETs
PTFA081501F page 2 PTFA081501F page 3

PTFA081501F Overview

The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS® FETs intended for ultralinear applications. They are characaterized for CDMA and CDMA2000 operation from 864 to 900 MHz. Thermally-enhanced packages provide the coolest operation available.

PTFA081501F Key Features

  • Average output power = 35 W
  • Linear Gain = 18 dB
  • Efficiency = 34%
  • Adjacent channel power = -50 dBc Typical CW performance, 900 MHz, 28 V
  • Output power at P-1dB = 165 W
  • Efficiency = 62% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI dri
  • 30 -40
  • Efficiency
  • 70 -80
  • Output Power (dBm), Avg
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Part Number Description
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PTFA082201E Thermally-Enhanced High Power RF LDMOS FETs
PTFA082201F Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501E Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501F Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501GL Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501HL Thermally-Enhanced High Power RF LDMOS FETs
PTFA043002E Thermally-Enhanced High Power RF LDMOS FETs

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