PTFA082201E - Thermally-Enhanced High Power RF LDMOS FETs

Product Overview

Infineon

Part number	PTFA082201E
Manufacturer	Infineon
File Size	372.95 KB
Description	Thermally-Enhanced High Power RF LDMOS FETs
Datasheet	PTFA082201E Datasheet
Additional preview pages of the PTFA082201E datasheet.

The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in the 869 to 894 MHz band.

include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA082201E Package H-36260-2 PTFA082201F Package H-37260-2 2-Carrier WCDMA Performance VDD = 30 V, IDQ = 1950 mA, ƒ = 894 MHz, 3GPP WCDMA signal, P/A R = 8.1 dB, 10 MHz carrier spacing, 3.84 MHz bandwidth 50 40 30 20 10 0 30 35 40 45 50 -30 -35 -40 -45 Features.

📁 Similar Datasheet

PTFA - Plug Type Fixed Attenuator (OPLINK)
PTFA142401EL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA142401FL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA180701E - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA180701F - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA181001E - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA181001F - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA181001GL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)

Other Datasheets by Infineon

Published: Aug 6, 2013 |