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PTFA082201F

Manufacturer: Infineon

PTFA082201F datasheet by Infineon.

This datasheet includes multiple variants, all published together in a single manufacturer document.

PTFA082201F datasheet preview

PTFA082201F Datasheet Details

Part number PTFA082201F
Datasheet PTFA082201F PTFA082201E Datasheet (PDF)
File Size 372.95 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FETs
PTFA082201F page 2 PTFA082201F page 3

PTFA082201F Overview

The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in the 869 to 894 MHz band.

PTFA082201F Key Features

  • IMD (dBc), ACPR (dBc)
  • Average output power = 55 W
  • Linear Gain = 18.0 dB
  • Efficiency = 30%
  • Intermodulation distortion = -37 dBc
  • Adjacent channel power = -39.5 dBc Typical CW performance, 894 MHz, 30 V
  • Output power at P-1dB = 250 W
  • Efficiency = 59% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI dri
  • Gain Efficiency
  • 50 -55
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More Datasheets from Infineon

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Part Number Description
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PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs
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PTFA041501F Thermally-Enhanced High Power RF LDMOS FETs
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PTFA041501HL Thermally-Enhanced High Power RF LDMOS FETs
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