PTFA082201F Datasheet Thermally-enhanced High Power Rf Ldmos Fets

Manufacturer: Infineon

Overview: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	PTFA082201F
Manufacturer	Infineon
File Size	372.95 KB
Description	Thermally-Enhanced High Power RF LDMOS FETs
Datasheet	PTFA082201F PTFA082201E Datasheet (PDF)

The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in the 869 to 894 MHz band.

include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA082201E Package H-36260-2 PTFA082201F Package H-37260-2 2-Carrier WCDMA Performance VDD = 30 V, IDQ = 1950 mA, ƒ = 894 MHz, 3GPP WCDMA signal, P/A R = 8.1 dB, 10 MHz carrier spacing, 3.84 MHz bandwidth 50 40 30 20 10 0 30 35 40 45 50 -30 -35 -40 -45 Features.

Part Number	Description
PTFA082201E	Thermally-Enhanced High Power RF LDMOS FETs
PTFA080551E	Thermally-Enhanced High Power RF LDMOS FETs
PTFA080551F	Thermally-Enhanced High Power RF LDMOS FETs
PTFA081501E	Thermally-Enhanced High Power RF LDMOS FETs
PTFA081501F	Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501E	Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501F	Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501GL	Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501HL	Thermally-Enhanced High Power RF LDMOS FETs
PTFA043002E	Thermally-Enhanced High Power RF LDMOS FETs