Datasheet Details
| Part number | PTFA092201E |
|---|---|
| Manufacturer | Infineon |
| File Size | 397.27 KB |
| Description | Thermally-Enhanced High Power RF LDMOS FETs |
| Datasheet |
 PTFA092201E Datasheet
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General Description
The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
Key Features
- IMD (dBc), ACPR (dBc) Pb-free, RoHS-compliant and thermally-enhanced packages Broadband internal matching Typical two-carrier WCDMA performance at 960 MHz, 30 V - Average output power = 55 W - Linear Gain = 18.5 dB - Efficiency = 30% - Intermodulation distortion =.
- 37 dBc - Adjacent channel power =.
- 39 dBc Typical CW performance, 960 MHz, 30 V - Output power at P.
- 1dB = 250 W - Gain = 17.5 dB - Efficiency = 59% Integrated ESD protection: Huma.