PTFA092201E
PTFA092201E is Thermally-Enhanced High Power RF LDMOS FETs manufactured by Infineon.
PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920
- 960 MHz
Description
The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA092201E Package H-36260-2
PTFA092201F Package H-37260-2
2-Carrier WCDMA Performance
VDD = 30 V, IDQ = 1850 m A, ƒ = 960 MHz, 3GPP WCDMA signal, P/A R = 8.1 d B, 10 MHz carrier spacing, 3.84 MHz bandwidth
60 50 -30
Features
- -
- IMD (d Bc), ACPR (d Bc)
Pb-free, Ro HS-pliant and thermally-enhanced packages Broadband internal matching Typical two-carrier WCDMA performance at 960 MHz, 30 V
- Average output power = 55 W
- Linear Gain = 18.5 d B
- Efficiency = 30%
- Intermodulation distortion =
- 37 d Bc
- Adjacent channel power =
- 39 d Bc Typical CW performance, 960 MHz, 30 V
- Output power at P- 1d B = 250 W
- Gain = 17.5 d B
- Efficiency = 59% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 30 V, 220 W (CW) output power
-35
Drain Efficiency (%)
40 30 20 10 0 30 35 40
ACPR
-40 -45 -50
- Gain Efficiency
45 50
-55...
