PTFA092201F Datasheet (Infineon)

Part PTFA092201F
Description Thermally-Enhanced High Power RF LDMOS FETs
Manufacturer Infineon
Size 397.27 KB
Pricing from 66.7437 USD, available from Win Source and Run Hong Electronics.
Infineon

PTFA092201F Overview

Key Specifications

Mount Type: Surface Mount
Pins: 3
Max Operating Temp: 200 °C
Min Operating Temp: -40 °C

Description

The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.

Key Features

  • Average output power = 55 W
  • Linear Gain = 18.5 dB
  • Efficiency = 30%
  • Intermodulation distortion = –37 dBc
  • Adjacent channel power = –39 dBc Typical CW performance, 960 MHz, 30 V

Price & Availability

Seller Inventory Price Breaks Buy
Win Source 5 - View Offer
Run Hong Electronics 8158 1+ : 66.7437 USD View Offer