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PTFA092201F Datasheet

Manufacturer: Infineon

This datasheet includes multiple variants, all published together in a single manufacturer document.

PTFA092201F datasheet preview

Datasheet Details

Part number PTFA092201F
Datasheet PTFA092201F PTFA092201E Datasheet (PDF)
File Size 397.27 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FETs
PTFA092201F page 2 PTFA092201F page 3

PTFA092201F Overview

The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.

PTFA092201F Key Features

  • Average output power = 55 W
  • Linear Gain = 18.5 dB
  • Efficiency = 30%
  • Intermodulation distortion = -37 dBc
  • Adjacent channel power = -39 dBc Typical CW performance, 960 MHz, 30 V
  • Output power at P-1dB = 250 W
  • Gain = 17.5 dB
  • Efficiency = 59% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI dri
  • 40 -45 -50
  • Gain Efficiency
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More Datasheets from Infineon

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Part Number Description
PTFA092201E Thermally-Enhanced High Power RF LDMOS FETs
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PTFA092211FL Thermally-Enhanced High Power RF LDMOS FETs
PTFA092213EL Thermally-Enhanced High Power RF LDMOS FETs
PTFA092213FL Thermally-Enhanced High Power RF LDMOS FETs
PTFA091201E Thermally-Enhanced High Power RF LDMOS FETs
PTFA091201F Thermally-Enhanced High Power RF LDMOS FETs
PTFA091201GL Thermally-Enhanced High Power RF LDMOS FETs
PTFA091201HL Thermally-Enhanced High Power RF LDMOS FETs
PTFA091203EL Thermally-Enhanced High Power RF LDMOS FETs

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