PTFA212001E Datasheet Thermally-Enhanced High Power RF LDMOS FET

Manufacturer: Infineon

PTFA212001E thermally-enhanced high power rf ldmos fet by Infineon - Datasheet Preview

Datasheet Details

Part number	PTFA212001E
Manufacturer	Infineon
File Size	391.34 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Download	PTFA212001E Download (PDF)

General Description

The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band.

Overview

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170.

Key Features

include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA212001E Package H-36260-2 PTFA212001F Package H-37260-2 PTFA212001E PTFA212001F IM3 (dBc), ACPR (dBc) Drain Efficiency (%) 2-Carrier WCDMA Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -23 30 -28 Eff.

More Datasheets from Infineon

Part Number	Description
PTFA212001F	Thermally-Enhanced High Power RF LDMOS FET
PTFA212002E	Thermally-Enhanced High Power RF LDMOS FET
PTFA212401E	Thermally-Enhanced High Power RF LDMOS FET
PTFA212401F	Thermally-Enhanced High Power RF LDMOS FET
PTFA210301E	Thermally-Enhanced High Power RF LDMOS FET
PTFA210601E	Thermally-Enhanced High Power RF LDMOS FET
PTFA210601F	Thermally-Enhanced High Power RF LDMOS FET
PTFA210701E	Thermally-Enhanced High Power RF LDMOS FET
PTFA210701F	Thermally-Enhanced High Power RF LDMOS FET
PTFA211001E	Thermally-Enhanced High Power RF LDMOS FET