• Part: PTFA212001E
  • Description: Thermally-Enhanced High Power RF LDMOS FET
  • Manufacturer: Infineon
  • Size: 391.34 KB
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Datasheet Summary

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 - 2170 MHz Description The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA212001E Package H-36260-2 PTFA212001F Package H-37260-2 PTFA212001E PTFA212001F IM3 (dBc), ACPR (dBc) Drain Efficiency (%) 2-Carrier WCDMA Drive-up VDD = 30 V, IDQ =...