Datasheet Details
| Part number | PTFA212002E |
|---|---|
| Manufacturer | Infineon |
| File Size | 217.26 KB |
| Description | Thermally-Enhanced High Power RF LDMOS FET |
| Download |
PTFA212002E Download (PDF)
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| Part number | PTFA212002E |
|---|---|
| Manufacturer | Infineon |
| File Size | 217.26 KB |
| Description | Thermally-Enhanced High Power RF LDMOS FET |
| Download |
PTFA212002E Download (PDF)
|
|
|
|
The PTFA212002E is a 200-watt, internally-matched, laterally doublediffused, GOLDMOS push-pull FET.
It is characaterized for singleand two-carrier WCDMA operation from 2110 to 2170 MHz.
Thermally-enhanced packaging provides the coolest operation available.
PTFA212002E Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110 – 2170.
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