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PTFA212002E - Thermally-Enhanced High Power RF LDMOS FET

Datasheet Summary

Description

The PTFA212002E is a 200-watt, internally-matched, laterally doublediffused, GOLDMOS push-pull FET.

It is characaterized for singleand two-carrier WCDMA operation from 2110 to 2170 MHz.

Thermally-enhanced packaging provides the coolest operation available.

Features

  • ons are mm. Alternate dimensions are inches. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www. infineon. com/rfpower Preliminary Data Sheet 9 of 10 Rev. 02.

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Datasheet Details

Part number PTFA212002E
Manufacturer Infineon
File Size 217.26 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFA212002E Datasheet
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PTFA212002E Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110 – 2170 MHz Description The PTFA212002E is a 200-watt, internally-matched, laterally doublediffused, GOLDMOS push-pull FET. It is characaterized for singleand two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. PTFA212002E Package 30275 IMD (dBc), ACPR (dBc) Efficiency (%), Gain (dB) Two–carrier WCDMA Drive–up VDD = 28 V, IDQ = 1600 mA, f1 = 2140 MHz, f2 = 2150 MHz, 3GPP WCDMA signal, P/A R = 8.0 dB, 3.84 MHz BW -25 35 Drain Efficiency -30 30 -35 25 -40 Gain -45 20 15 -50 -55 37 IM3 ACPR 40 43 46 Output Power, Avg.
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