| Part number | PTFA212002E |
|---|---|
| Datasheet | PTFA212002E-Infineon.pdf |
| File Size | 217.26 KB |
| Manufacturer | Infineon |
| Description | Thermally-Enhanced High Power RF LDMOS FET |
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The PTFA212002E is a 200-watt, internally-matched, laterally doublediffused, GOLDMOS push-pull FET. It is characaterized for singleand two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available.
| Part Number | Description |
|---|---|
| PTFA212001E | Thermally-Enhanced High Power RF LDMOS FET |
| PTFA212001F | Thermally-Enhanced High Power RF LDMOS FET |
| PTFA212401E | Thermally-Enhanced High Power RF LDMOS FET |
| PTFA212401F | Thermally-Enhanced High Power RF LDMOS FET |
| PTFA210301E | Thermally-Enhanced High Power RF LDMOS FET |
| PTFA210601E | Thermally-Enhanced High Power RF LDMOS FET |
| PTFA210601F | Thermally-Enhanced High Power RF LDMOS FET |
| PTFA210701E | Thermally-Enhanced High Power RF LDMOS FET |
| PTFA210701F | Thermally-Enhanced High Power RF LDMOS FET |
| PTFA211001E | Thermally-Enhanced High Power RF LDMOS FET |
