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PTFA212001F

Manufacturer: Infineon

This datasheet includes multiple variants, all published together in a single manufacturer document.

PTFA212001F datasheet preview

Datasheet Details

Part number PTFA212001F
Datasheet PTFA212001F PTFA212001E Datasheet (PDF)
File Size 391.34 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
PTFA212001F page 2 PTFA212001F page 3

PTFA212001F Overview

The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band.

PTFA212001F Key Features

  • 28 Efficiency
  • 38 IM3
  • 48 ACPR 5
  • Thermally-enhanced packages, Pb-free and RoHS pliant
  • Broadband internal matching
  • Typical two-carrier WCDMA performance at 2140 MHz, 30 V
  • Average output power = 50 W
  • Linear Gain = 15.8 dB
  • Efficiency = 28%
  • Intermodulation distortion = -35.5 dBc
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PTFA211001E Thermally-Enhanced High Power RF LDMOS FET

PTFA212001F Distributor

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