• Part: PTFA212001F
  • Description: Thermally-Enhanced High Power RF LDMOS FET
  • Manufacturer: Infineon
  • Size: 391.34 KB
PTFA212001F Datasheet (PDF) Download
Infineon
PTFA212001F

Description

The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges.

Key Features

  • Thermally-enhanced packages, Pb-free and RoHS compliant
  • Broadband internal matching
  • Typical two-carrier WCDMA performance at 2140 MHz, 30 V
  • Average output power = 50 W
  • Linear Gain = 15.8 dB
  • Efficiency = 28%
  • Intermodulation distortion = –35.5 dBc
  • Adjacent channel power = –40 dBc
  • Typical single-carrier WCDMA performance at 2140 MHz, 30 V, 3GPP signal, P/AR = 7.5 dB
  • Average output power = 70 W