Description
The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band.
Features
- include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA120251EA Package H-36265-2
Output Power (dBm) Drain Efficiency (%)
Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA, TCASE = 25°C
300 µs pulse width, 12% duty cycle
60 Efficiency
55
70 60
50
45
40
35
30 18
Output Power
50
40
1200 MHz
1300 MHz 30
1400 MHz
1200 MHz 1300 Mhz
20
140.
PTVA120251EA Datasheet
