Description
The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band.
Features
- include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA, TCASE = 25°C
300 µs pulse width, 12% duty cycle
60
70
Efficiency
55
60
Output Power (dBm) Drain Efficiency (%)
50 45 40 35 30
18
50 Output Power
40
1200 MHz
1300 MHz 30
1400 MHz
1200 MHz 1300 Mhz
20
1400 MHz
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10
22
26.