PTVA120251EA Datasheet 25w High Power Rf Ldmos Fet

Manufacturer: MACOM Technology Solutions

Overview: PTVA120251EA Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 – 1400.

Datasheet Details

The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band.

include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA, TCASE = 25°C 300 µs pulse width, 12% duty cycle 60 70 Efficiency 55 60 Output Power (dBm) Drain Efficiency (%) 50 45 40 35 30 18 50 Output Power 40 1200 MHz 1300 MHz 30 1400 MHz 1200 MHz 1300 Mhz 20 1400 MHz a120251ea-v2-gr1a``` 10 22 26.

Brand Logo	Part Number	Description	Manufacturer
	PTVA120251EA	Thermally-Enhanced High Power RF LDMOS FET	Infineon

Part Number	Description
PTVA120501EA	50W High Power RF LDMOS FET
PTVA082407NF	Thermally-Enhanced High Power RF LDMOS FET