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PTVA120252MT Datasheet Thermally-enhanced High Power Rf Ldmos Fet

Manufacturer: Wolfspeed

Overview: PTVA120252MT Thermally-Enhanced High Power RF LDMOS FET 25 W, 48 V, 500 – 1400.

General Description

The PTVA120252MT LDMOS FET is a 25-watt LDMOS FET designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band.

Key Features

  • include high gain and a thermally-enhanced, surface-mount package. Manufactured with Wolfspeed’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Package Types: PG-SON-16 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 95 mA, ƒ = 960 MHz 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 75 Gain 20 50 16 25 Efficiency 12 0 8 -25 PAR @ 0.01% CCDF 4 -50 0 29 ptva120252mt_g1 -75 33 37.

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