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IGBT Chip in NPT-technology
FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling
SIGC25T60SNC
This chip is used for: • SGP30N60
Applications: • drives
C G
E
Chip Type SIGC25T60SNC SIGC25T60SNC
VCE
ICn
Die Size
600V 30A 4.5 x 5.71 mm2
600V 30A 4.5 x 5.71 mm2
Package Ordering Code
sawn on foil unsawn
Q67041-A4667A001
Q67041-A4667A002
MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization
Collector metallization
Die bond Wire bond Reject Ink Dot Size
Recommended Storage Environment
4.5 x 5.71
mm2
25.7 / 21.4
2x( 2.18x1.58 )
0.68 x 1.
SIGC25T60SNC Datasheet
