PTF080901F Description
The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
PTF080901F Key Features
- Broadband internal matching Typical EDGE performance
- Average output power = 45 W
- Gain = 18 dB
- Efficiency = 40% Typical CW performance
- Output power at P-1dB = 120 W
- Gain = 17 dB
- Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drif
- Modulation Spectrum (dB)
- 0.1 3.2