Datasheet Details
| Part number | ITCH36015E2 |
|---|---|
| Manufacturer | Innogration |
| File Size | 931.12 KB |
| Description | RF Power LDMOS FET |
| Datasheet |
 ITCH36015E2 Datasheet
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General Description
The ITCH36015E2 is a 20-watt, internally matched LDMOS FET, designed for cellular base station and ISM applications with frequencies from 700MHz to 3600 MHz
ITCH36015E2
Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 120 mA，Pulse Width =20us, Duty Cy
Key Features
- High Efficiency and Linear Gain Operations.
- Integrated ESD Protection.
- Internally Matched for Ease of Use.
- Excellent thermal stability, low HCI drift.
- Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
- Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Symbol Value Unit VDSS +65 Vdc VGS -10 to +10 Vdc 1/5 Innogration (Suzhou) Co. , Ltd. Document Number: ITCH36015E2 Preli.