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MR2002C - High Power RF LDMOS FET

General Description

The MR2002C is a 20-watt, unmatched LDMOS FETs, designed for Wide-band and Mobile radio applications with frequencies under 2000 MHz.

in Class AB/B and Class C for all typical modulation formats.

Key Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Pb-free, RoHS-compliant Suitable.

📥 Download Datasheet

Datasheet Details

Part number MR2002C
Manufacturer Innogration
File Size 280.57 KB
Description High Power RF LDMOS FET
Datasheet download datasheet MR2002C Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MR2002C LDMOS TRANSISTOR Document Number: MR2002C Preliminary Datasheet V1.1 20W, 28V High Power RF LDMOS FETs Description The MR2002C is a 20-watt, unmatched LDMOS FETs, designed for Wide-band and Mobile radio applications with frequencies under 2000 MHz. It can be used MR2002C in Class AB/B and Class C for all typical modulation formats. It can also operate at lower voltage down to 12V with decreased power capability.  Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 100 mA, CW. Frequency Gp (dB) P-1dB (W) 1000 MHz 22 20 D@P-1 (%) 65 Notice: It is recommended to operate this device only below 24V like 14V,12V etc, if operation band is below 500MHz.