MR2002C Key Features
- High Efficiency and Linear Gain Operations
- Integrated ESD Protection
- Excellent thermal stability, low HCI drift
- Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
- Pb-free, RoHS-pliant
- Part: MR2002C
- Description: High Power RF LDMOS FET
- Manufacturer: Innogration
- Size: 280.57 KB
Other MR2002C Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Digitron Semiconductors |
MR2002 | MEDIUM CURRENT SILICON RECTIFIERS |