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MR2002C LDMOS TRANSISTOR
Document Number: MR2002C Preliminary Datasheet V1.1
20W, 28V High Power RF LDMOS FETs
Description
The MR2002C is a 20-watt, unmatched LDMOS FETs, designed for Wide-band and Mobile radio applications with frequencies under 2000 MHz. It can be used
MR2002C
in Class AB/B and Class C for all typical modulation formats.
It can also operate at lower voltage down to 12V with decreased power capability.
Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 100 mA, CW.
Frequency Gp (dB)
P-1dB (W)
1000 MHz
22
20
D@P-1 (%) 65
Notice:
It is recommended to operate this device only below 24V like 14V,12V etc, if operation band is below 500MHz.