MR2006C Key Features
- High Efficiency and Linear Gain Operations
- Integrated ESD Protection
- Excellent thermal stability, low HCI drift
- Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
- Pb-free, RoHS-pliant
- Part: MR2006C
- Description: High Power RF LDMOS FET
- Manufacturer: Innogration
- Size: 280.59 KB
Other MR2006C Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Digitron Semiconductors |
MR2006 | MEDIUM CURRENT SILICON RECTIFIERS |