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MR2006C LDMOS TRANSISTOR
Document Number: MR2006C Objective Datasheet V1.1
60W, 28V High Power RF LDMOS FETs
Description
The MR2006C is a 60-watt, unmatched LDMOS FETs, designed for Wide-band and Mobile radio applications with frequencies under 2000 MHz. It can be used
MR2006C
in Class AB/B and Class C for all typical modulation formats.
It can also operate at lower voltage down to 12V with decreased power capability.
Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 400 mA, CW.
Frequency Gp (dB)
P-1dB (W)
1000 MHz
20
60
D@P-1 (%) 60
Notice:
It is recommended to operate this device only below 24V like 14V,12V etc, if operation band is below 500MHz.