MR2003C - High Power RF LDMOS FET

Product Overview

Innogration

Datasheet Details

Part number	MR2003C
Manufacturer	Innogration
File Size	280.48 KB
Description	High Power RF LDMOS FET
Datasheet	MR2003C Datasheet
Additional preview pages of the MR2003C datasheet.

Product details

Description

The MR2003C is a 30-watt, unmatched LDMOS FETs, designed for Wide-band and Mobile radio applications with frequencies under 2000 MHz. Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 200 mA, CW.Frequency Gp (dB) P-1dB (W) 1000 MHz 22 30 D@P-1 (%) 65 Notice: It is recomme

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Excellent thermal stability, low HCI drift.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Pb-free, RoHS-compliant Suitable Applicatio.

📁 Similar Datasheet

MR2000 - MEDIUM CURRENT SILICON RECTIFIERS (Digitron Semiconductors)
MR2001 - MEDIUM CURRENT SILICON RECTIFIERS (Digitron Semiconductors)
MR2002 - MEDIUM CURRENT SILICON RECTIFIERS (Digitron Semiconductors)
MR2004 - MEDIUM CURRENT SILICON RECTIFIERS (Digitron Semiconductors)
MR2006 - MEDIUM CURRENT SILICON RECTIFIERS (Digitron Semiconductors)
MR2008 - MEDIUM CURRENT SILICON RECTIFIERS (Digitron Semiconductors)
MR2010 - MEDIUM CURRENT SILICON RECTIFIERS (Digitron Semiconductors)
MR20H40 - 4Mb SPI Interface MRAM (Everspin)

Other Datasheets by Innogration

MR2002C - High Power RF LDMOS FET
MR2006C - High Power RF LDMOS FET

Published: Aug 5, 2018 |