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MR2003C - High Power RF LDMOS FET

Datasheet Summary

Description

The MR2003C is a 30-watt, unmatched LDMOS FETs, designed for Wide-band and Mobile radio applications with frequencies under 2000 MHz.

in Class AB/B and Class C for all typical modulation formats.

Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Pb-free, RoHS-compliant Suitable Applicatio.

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Datasheet preview – MR2003C

Datasheet Details

Part number MR2003C
Manufacturer Innogration
File Size 280.48 KB
Description High Power RF LDMOS FET
Datasheet download datasheet MR2003C Datasheet
Additional preview pages of the MR2003C datasheet.

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Full PDF Text Transcription

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MR2003C LDMOS TRANSISTOR Document Number: MR2003C Preliminary Datasheet V1.1 30W, 28V High Power RF LDMOS FETs Description The MR2003C is a 30-watt, unmatched LDMOS FETs, designed for Wide-band and Mobile radio applications with frequencies under 2000 MHz. It can be used MR2003C in Class AB/B and Class C for all typical modulation formats. It can also operate at lower voltage down to 12V with decrease power capability.  Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 200 mA, CW. Frequency Gp (dB) P-1dB (W) 1000 MHz 22 30 D@P-1 (%) 65 Notice: It is recommended to operate this device only below 24V like 14V,12.5V etc, if operation band is below 500MHz.
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