MR2003C Key Features
- High Efficiency and Linear Gain Operations
- Integrated ESD Protection
- Excellent thermal stability, low HCI drift
- Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
- Pb-free, RoHS-pliant
- Part: MR2003C
- Description: High Power RF LDMOS FET
- Manufacturer: Innogration
- Size: 280.48 KB
Related Innogration Datasheets
| Part Number | Description |
|---|---|
| MR2002C | High Power RF LDMOS FET |
| MR2006C | High Power RF LDMOS FET |