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IS42R32200C1 - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

General Description

A0-A10 BA0, BA1 DQ0 to DQ31 CLK CKE CS RAS CAS WE Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Row Address Strobe Command Column Address Strobe Command Write Enable DQ19 DQ20 GNDQ DQ21 DQ22 VDDQ DQ23 VDD VDD GND VDDQ GNDQ NC Power Ground Power Supply for

Key Features

  • Clock frequency: 133, 100 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access/precharge.
  • Single 2.5V power supply.
  • LVTTL interface.
  • Programmable burst length: (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave.
  • Self refresh modes.
  • 4096 refresh cycles every 64 ms.
  • Random column address every clock cycle.
  • Programmable.

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IS42S16100 512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS42R32200C1 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 133, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single 2.