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IS43R16800A1 - 8Meg x 16 128-MBIT DDR SDRAM

General Description

A0-A11 A0-A8 BA0, BA1 DQ0 to DQ15 CK CKE CS RAS CAS Row Address Input Column Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Row Address Strobe Command Column Address Strobe Command WE LDM, UDM LDQS, UDQS VDD Vss VDDQ VssQ DNU NC Write Enable x16 Input/Output

Key Features

  • ISSI DEVICE.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS43R16800A-6 8Meg x 16 128-MBIT DDR SDRAM
IS43R16800CC 128Mb DDR Synchronous DRAM
IS43R16800E 128Mb DDR SDRAM
IS43R16160 256Mb Synchronous DRAM
IS43R16160A 16Meg x 16 256-MBIT DDR SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS43R16800A1 8Meg x 16 128-MBIT DDR SDRAM FEATURES ISSI DEVICE OVERVIEW ® PRELIMINARY INFORMATION APRIL 2006 • • • • • • • • • • • • Clock Frequency: 200, 166 MHz Power supply (VDD and VDDQ): 2.6V SSTL 2 interface Four internal banks to hide row Pre-charge and Active operations Commands and addresses register on positive clock edges (CK) Bi-directional Data Strobe signal for data capture Differential clock inputs (CK and CK) for two data accesses per clock cycle Data Mask feature for Writes supported DLL aligns data I/O and Data Strobe transitions with clock inputs Programmable burst length for Read and Write operations Programmable CAS Latency (2.