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IS43R16160A - 16Meg x 16 256-MBIT DDR SDRAM

General Description

A0-A12 A0-A8 BA0, BA1 DQ0 to DQ15 CK, CK CKE CS RAS CAS Row Address Input Column Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Row Address Strobe Command Column Address Strobe Command WE LDM, UDM LDQS, UDQS VDD Vss VDDQ VssQ VREF NC Write Enable x16 Input Ma

Key Features

  • ISSI DEVICE.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS43R16160A 16Meg x 16 256-MBIT DDR SDRAM FEATURES ISSI DEVICE OVERVIEW ® PRELIMINARY INFORMATION NOVEMBER 2005 • • • • • • • • • Clock Frequency: 200, 166 MHz Power supply (VDD and VDDQ) DDR 333: 2.5V + 0.2V DDR 400: 2.6V + 0.1V SSTL 2 interface Four internal banks to hide row Pre-charge and Active operations Commands and addresses register on positive clock edges (CK) Bi-directional Data Strobe signal for data capture Differential clock inputs (CK and CK) for two data accesses per clock cycle Data Mask feature for Writes supported DLL aligns data I/O and Data Strobe transitions with clock inputs • Half-strength and Full-strength drive strength options • Programmable burst length for Read and Write operations • Programmable CAS Latency (2, 2.5, or 3 www.DataSheet4U.