IS43R16160D

Manufacturer: ISSI (now Infineon)

IS43R16160D datasheet by ISSI (now Infineon).

This datasheet includes multiple variants, all published together in a single manufacturer document.

IS43R16160D Datasheet Details

IS43R83200D IS43/46R16160D, IS43/46R32800D JUNE 2012 8Mx32, 16Mx16, 32Mx8 256Mb DDR SDRAM.

VDD and VDDQ: 2.5V ± 0.2V
SSTL_2 patible I/O
Double-data rate architecture; two data transfers per clock cycle
Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver
DQS is edge-aligned with data for READs and centre-aligned with data for WRITEs
Differential clock inputs (CK and CK)
DLL aligns DQ and DQS transitions with CK transitions
mands entered on each positive CK edge; data and data mask referenced to both edges of DQS
Four internal banks for concurrent operation
Data Mask for write data. DM masks write data at both rising and falling edges of data strobe

Part Number	Description	Other Manufacturers
IS43R16160	256Mb Synchronous DRAM	Integrated Silicon Solution
IS43R16160A	16Meg x 16 256-MBIT DDR SDRAM	Integrated Silicon Solution
IS43R16160F	256Mb DDR SDRAM	Integrated Silicon Solution

Part Number	Description
IS43R16160B	256Mb DDR Synchronous DRAM
IS43R16320F	512Mb DDR SDRAM
IS43R16400B	Four internal banks for concurrent operation
IS43R32800D	DDR SDRAM
IS43R32800D	DDR SDRAM
IS43R83200B	256Mb DDR Synchronous DRAM
IS43R83200D	DDR SDRAM
IS43R86400F	512Mb DDR SDRAM
IS43DR16128C	DDR2 DRAM
IS43DR16160B	DDR2 DRAM